Abstract: We experimentally confirmed that the steep subthreshold slope (SS) device “PN body-tied silicon-on-insulator (SOI) field-effect transistor” can reduce the short-circuit current of a ...
Abstract: Short-circuit (SC) robustness is an important concern for power devices in switching mode power supplies. For individual transistors such as Si and SiC MOSFETs, the SC capability has been ...
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